High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm

• Main Authors: Zhou, Hao, Xu, Shengqiang, Lin, Yiding, Huang, Yi-Chiau, Son, Bongkwon, Chen, Qimiao, Guo, Xin, Lee, Kwang Hong, Goh, Simon Chun-Kiat, Gong, Xiao, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Germanium; Photodetector
• Online Access: https://hdl.handle.net/10356/141368
• Institution: Nanyang Technological University

We introduced photon-trapping microstructures into GeSn-based photodetectors for the first time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W. The demonstration was realized by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode on a GeOI architecture. Comp...