High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation

• Main Authors: Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Wang, Yue, Wu, Shaoteng, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Germanium; Photodetector
• Online Access: https://hdl.handle.net/10356/143501
• Institution: Nanyang Technological University

Germanium (Ge) vertical p-i-n photodetectors were demonstrated with an ultra-low dark current of 0.57 mA/cm2 at -1 V. A germanium-on-insulator (GOI) platform with a 200-mm wafer scale was realized for photodetector fabrication via direct wafer bonding and layer transfer techniques, followed by oxyge...