Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

• Main Authors: Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Chen, Qimiao, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Germanium; Photodetectors
• Online Access: https://hdl.handle.net/10356/142093
• Institution: Nanyang Technological University

Dark current characteristics of germanium (Ge) vertical p-i-n photodetectors were studied. Ge photodetectors were demonstrated on the germanium-on-insulator (GOI) platforms realized via direct wafer bonding and layer transfer. GOI platforms with two different threading dislocation densities (TDDs) o...