Dark current analysis of germanium-on-insulator vertical p-i-n photodetectors with varying threading dislocation density

• المؤلفون الرئيسيون: Son, Bongkwon, Lin, Yiding, Lee, Kwang Hong, Chen, Qimiao, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Germanium; Photodetectors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/142093

Dark current characteristics of germanium (Ge) vertical p-i-n photodetectors were studied. Ge photodetectors were demonstrated on the germanium-on-insulator (GOI) platforms realized via direct wafer bonding and layer transfer. GOI platforms with two different threading dislocation densities (TDDs) o...