Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications

by GONG XIAO
Published 2013

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness

by Han, Kaizhen, Samanta, Subhranu, Sun, Chen, Gong, Xiao
Published 2022

Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO_x/W cross-point structure

by Samanta, Subhranu, Gong, Xiao, Zhang, Panpan, Han, Kaizhen, Fong, Xuanyao
Published 2023

Effects of the ratio of inventories, financial structure and market share to profitability ratios: An empirical study on the publicly-listed food and beverage manufacturing compani...

by Calingasan, Anna Patricia M., Dimapilis, Marielle Christi F., Gong, Xiao Wei
Published 2015

Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending

by An, Shu, Wu, Shaoteng, Tan, Chuan Seng, Chang, Guo-En, Gong, Xiao, Kim, Munho
Published 2021

Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO

by Wang, Lin, Liao, Wugang, Xu, Shengqiang, Gong, Xiao, Zhu, Chunxiang, Ang, Kah-Wee
Published 2020

Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO_x-Based Flexible Cross-Point RRAM

by Samanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao
Published 2023

Design and fabrication of high-performance multimode interferometer in lithium niobate thin film

by Chen, Guanyu, da Ng, Jun, Lin, Hong-Lin, Zhang, Gong, Gong, Xiao, Danner, Aaron J.
Published 2022

High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

by Xu, Shengqiang, Wang, Wei, Huang, Yi-Chiau, Dong, Yuan, Masudy-Panah, Saeid, Wang, Hong, Gong, Xiao, Yeo, Yee-Chia
Published 2019

GeSn-on-insulator substrate formed by direct wafer bonding

by Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Wang, Bing, Gong, Xiao, Tan, Chuan Seng, Yeo, Yee-Chia
Published 2016

A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface

by Chen, Qimiao, Zhou, Hao, Xu, Shengqiang, Huang, Yi-Chiau, Wu, Shaoteng, Lee, Kwang Hong, Gong, Xiao, Tan, Chuan Seng
Published 2023

High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection

by Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng
Published 2021

Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate

by Wu, Shaoteng, Zhang, Lin, Wan, Rongqiao, Zhou, Hao, Lee, Kwang Hong, Chen, Qimiao, Huang, Yi-Chiau, Gong, Xiao, Tan, Chuan Seng
Published 2023

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

by SAMANTA SUBHRANU, UMESH CHAND, XU SHENGQIANG, HAN KAIZHEN, WU YING, ANNIE KUMAR, LI YIDA, FONG XUANYAO, THEAN VOON YEW, AARON, GONG XIAO
Published 2021

Thermal stability of germanium-tin (GeSn) fins

by Lei, Dian, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Masudy-Panah, Saeid, Tan, Chuan Seng, Tok, Eng Soon, Gong, Xiao, Yeo, Yee-Chia
Published 2018

Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width

by Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J., Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
Published 2022

GeSn lateral p-i-n photodetector on insulating substrate

by Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published 2019

Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate

by Zhou, Hao, Xu, Shengqiang, Wu, Shaoteng, Huang, Yi-Chiau, Zhao, Peng, Tong, Jinchao, Son, Bongkwon, Guo, Xin, Zhang, Dao Hua, Gong, Xiao, Tan, Chuan Seng
Published 2020

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm

by Zhou, Hao, Xu, Shengqiang, Lin, Yiding, Huang, Yi-Chiau, Son, Bongkwon, Chen, Qimiao, Guo, Xin, Lee, Kwang Hong, Goh, Simon Chun-Kiat, Gong, Xiao, Tan, Chuan Seng
Published 2020

Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors

by Moutanabbir, Oussama, Assali, Simone, Gong, Xiao, O'Reilly, Eoin, Broderick, Chris A., Marzban, Bahareh, Witzens, Jeremy, Du, Wei, Yu, Shui-Qing, Chelnokov, Alexei, Buca, Dan, Nam, Donguk
Published 2023