Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending

We have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors (PDs) by exploring the effect of mechanical strain on their optoelectronic properties. The PDs were fabricated from transfer-printed GeSn nanomembranes on polyethylene terephthalate (PET) substrates. Strain was introdu...

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Bibliographic Details
Main Authors: An, Shu, Wu, Shaoteng, Tan, Chuan Seng, Chang, Guo-En, Gong, Xiao, Kim, Munho
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
Subjects:
Online Access:https://hdl.handle.net/10356/153649
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Institution: Nanyang Technological University
Language: English