Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending

• Main Authors: An, Shu, Wu, Shaoteng, Tan, Chuan Seng, Chang, Guo-En, Gong, Xiao, Kim, Munho
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics; Dark Currents; Light Absorption
• Online Access: https://hdl.handle.net/10356/153649
• Institution: Nanyang Technological University

We have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors (PDs) by exploring the effect of mechanical strain on their optoelectronic properties. The PDs were fabricated from transfer-printed GeSn nanomembranes on polyethylene terephthalate (PET) substrates. Strain was introdu...