Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width

by Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J., Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
Published 2022

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs)

by Kumar, Annie, Lee, Shuh-Ying, Yadav, Sachin, Tan, Kian Hua, Loke, Wan Khai, Dong, Yuan, Lee, Kwang Hong, Wicaksono, Satrio, Liang, Gengchiau, Yoon, Soon-Fatt, Antoniadis, Dimitri, Yeo, Yee-Chia, Gong, Xiao
Published 2019

Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate

by Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia
Published 2020