EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION

بواسطة WANG CHENGKUAN
منشور في 2024

Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width

بواسطة Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J., Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
منشور في 2022