Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM

Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM

10.1109/FLEPS.2019.8792259

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Bibliographic Details
Main Authors: Samanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: IEEE 2023
Subjects:
Science & Technology
Technology
Engineering, Manufacturing
Engineering, Electrical & Electronic
Instruments & Instrumentation
Materials Science, Multidisciplinary
Engineering
Materials Science
Flexible
RRAM
SiOx
Low CC
Online Access:https://scholarbank.nus.edu.sg/handle/10635/245806
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Institution: National University of Singapore

Internet

https://scholarbank.nus.edu.sg/handle/10635/245806

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