Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO_x/W cross-point structure

• المؤلفون الرئيسيون: Samanta, Subhranu, Gong, Xiao, Zhang, Panpan, Han, Kaizhen, Fong, Xuanyao
• مؤلفون آخرون: ELECTRICAL AND COMPUTER ENGINEERING
• التنسيق: مقال
• اللغة: English
• منشور في: ELSEVIER SCIENCE SA 2023
• الموضوعات: Science & Technology; Physical Sciences; Technology; Chemistry, Physical; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering; Chemistry; Materials Science; RRAM; Cross-point; SiOx; Low current; Neuromorphic; RANDOM-ACCESS MEMORY; OXIDE; RELIABILITY; DEVICE; LAYER
• الوصول للمادة أونلاين: https://scholarbank.nus.edu.sg/handle/10635/245804
• المؤسسة: National University of Singapore

10.1016/j.jallcom.2019.07.050