Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure

Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure

10.1016/j.jallcom.2019.07.050

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Bibliographic Details
Main Authors: Samanta, Subhranu, Gong, Xiao, Zhang, Panpan, Han, Kaizhen, Fong, Xuanyao
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: ELSEVIER SCIENCE SA 2023
Subjects:
Science & Technology
Physical Sciences
Technology
Chemistry, Physical
Materials Science, Multidisciplinary
Metallurgy & Metallurgical Engineering
Chemistry
Materials Science
RRAM
Cross-point
SiOx
Low current
Neuromorphic
RANDOM-ACCESS MEMORY
OXIDE
RELIABILITY
DEVICE
LAYER
Online Access:https://scholarbank.nus.edu.sg/handle/10635/245804
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/245804

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