Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiOx/W cross-point structure

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Bibliographic Details
Main Authors: Subhranu Samanta, Xiao Gong, Panpan Zhang, Kaizhen Han, Xuanyao Fong
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Published: 2024
Online Access:https://scholarbank.nus.edu.sg/handle/10635/249170
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Institution: National University of Singapore

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https://scholarbank.nus.edu.sg/handle/10635/249170

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