Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer

Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer

10.1109/TED.2020.2989105

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Bibliographic Details
Main Authors: Zhang, Panpan, Samanta, Subhranu, Fong, Xuanyao
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
Subjects:
Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Physics, Applied
Engineering
Physics
Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)
interface engineering
passivation layer (PVL)
technology computer-aided design (TCAD)
A-IGZO TFTS
Online Access:https://scholarbank.nus.edu.sg/handle/10635/245802
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/245802

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