Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

10.1109/LED.2020.2985787

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Bibliographic Details
Main Authors: SAMANTA SUBHRANU, UMESH CHAND, XU SHENGQIANG, HAN KAIZHEN, WU YING, ANNIE KUMAR, LI YIDA, FONG XUANYAO, THEAN VOON YEW, AARON, GONG XIAO
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: IEEE 2021
Subjects:
IGZO, TFT, subthreshold swing, effective mobility, uniformity
Online Access:https://scholarbank.nus.edu.sg/handle/10635/192013
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Institution: National University of Singapore
Language: English

Internet

https://scholarbank.nus.edu.sg/handle/10635/192013

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