Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

10.1109/LED.2020.2985787

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Main Authors: SAMANTA SUBHRANU, UMESH CHAND, XU SHENGQIANG, HAN KAIZHEN, WU YING, ANNIE KUMAR, LI YIDA, FONG XUANYAO, THEAN VOON YEW, AARON, GONG XIAO
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: IEEE 2021
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Online Access:https://scholarbank.nus.edu.sg/handle/10635/192013
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-1920132024-04-25T03:32:24Z Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity SAMANTA SUBHRANU UMESH CHAND XU SHENGQIANG HAN KAIZHEN WU YING ANNIE KUMAR LI YIDA FONG XUANYAO THEAN VOON YEW, AARON GONG XIAO ELECTRICAL AND COMPUTER ENGINEERING IGZO, TFT, subthreshold swing, effective mobility, uniformity 10.1109/LED.2020.2985787 IEEE Electron Device Letters 41 6 856-859 2021-06-14T02:34:12Z 2021-06-14T02:34:12Z 2020-04-06 Article SAMANTA SUBHRANU, UMESH CHAND, XU SHENGQIANG, HAN KAIZHEN, WU YING, ANNIE KUMAR, LI YIDA, FONG XUANYAO, THEAN VOON YEW, AARON, GONG XIAO (2020-04-06). Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity. IEEE Electron Device Letters 41 (6) : 856-859. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2020.2985787 15580563 https://scholarbank.nus.edu.sg/handle/10635/192013 en CC0 1.0 Universal http://creativecommons.org/publicdomain/zero/1.0/ IEEE
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
topic IGZO, TFT, subthreshold swing, effective mobility, uniformity
spellingShingle IGZO, TFT, subthreshold swing, effective mobility, uniformity
SAMANTA SUBHRANU
UMESH CHAND
XU SHENGQIANG
HAN KAIZHEN
WU YING
ANNIE KUMAR
LI YIDA
FONG XUANYAO
THEAN VOON YEW, AARON
GONG XIAO
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
description 10.1109/LED.2020.2985787
author2 ELECTRICAL AND COMPUTER ENGINEERING
author_facet ELECTRICAL AND COMPUTER ENGINEERING
SAMANTA SUBHRANU
UMESH CHAND
XU SHENGQIANG
HAN KAIZHEN
WU YING
ANNIE KUMAR
LI YIDA
FONG XUANYAO
THEAN VOON YEW, AARON
GONG XIAO
format Article
author SAMANTA SUBHRANU
UMESH CHAND
XU SHENGQIANG
HAN KAIZHEN
WU YING
ANNIE KUMAR
LI YIDA
FONG XUANYAO
THEAN VOON YEW, AARON
GONG XIAO
author_sort SAMANTA SUBHRANU
title Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
title_short Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
title_full Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
title_fullStr Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
title_full_unstemmed Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
title_sort low subthreshold swing and high mobility amorphous indium–gallium–zinc-oxide thin-film transistor with thin hfo2 gate dielectric and excellent uniformity
publisher IEEE
publishDate 2021
url https://scholarbank.nus.edu.sg/handle/10635/192013
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