Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer

10.1109/TED.2020.2989105

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Main Authors:	Zhang, Panpan, Samanta, Subhranu, Fong, Xuanyao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
Subjects:	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) interface engineering passivation layer (PVL) technology computer-aided design (TCAD) A-IGZO TFTS
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/245802
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-245802
record_format	dspace
spelling	sg-nus-scholar.10635-2458022024-04-16T11:52:48Z Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer Zhang, Panpan Samanta, Subhranu Fong, Xuanyao ELECTRICAL AND COMPUTER ENGINEERING Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) interface engineering passivation layer (PVL) technology computer-aided design (TCAD) A-IGZO TFTS 10.1109/TED.2020.2989105 IEEE TRANSACTIONS ON ELECTRON DEVICES 67 6 2352-2358 2023-11-08T03:17:10Z 2023-11-08T03:17:10Z 2020-06 2023-11-05T09:24:41Z Article Zhang, Panpan, Samanta, Subhranu, Fong, Xuanyao (2020-06). Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES 67 (6) : 2352-2358. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2020.2989105 0018-9383 1557-9646 https://scholarbank.nus.edu.sg/handle/10635/245802 en IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) interface engineering passivation layer (PVL) technology computer-aided design (TCAD) A-IGZO TFTS
spellingShingle	Science & Technology Technology Physical Sciences Engineering, Electrical & Electronic Physics, Applied Engineering Physics Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) interface engineering passivation layer (PVL) technology computer-aided design (TCAD) A-IGZO TFTS Zhang, Panpan Samanta, Subhranu Fong, Xuanyao Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer
description	10.1109/TED.2020.2989105
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Zhang, Panpan Samanta, Subhranu Fong, Xuanyao
format	Article
author	Zhang, Panpan Samanta, Subhranu Fong, Xuanyao
author_sort	Zhang, Panpan
title	Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer
title_short	Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer
title_full	Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer
title_fullStr	Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer
title_full_unstemmed	Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer
title_sort	physical insights into the mobility enhancement in amorphous ingazno thin-film transistor by sio<sub>2</sub> passivation layer
publisher	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
publishDate	2023
url	https://scholarbank.nus.edu.sg/handle/10635/245802
_version_	1800915972908908544

Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO<sub>2</sub> Passivation Layer

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