Physical Insights Into the Mobility Enhancement in Amorphous InGaZnO Thin-Film Transistor by SiO₂ Passivation Layer

• Main Authors: Zhang, Panpan, Samanta, Subhranu, Fong, Xuanyao
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Language: English
• Published: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2023
• Subjects: Science & Technology; Technology; Physical Sciences; Engineering, Electrical & Electronic; Physics, Applied; Engineering; Physics; Amorphous InGaZnO (a-IGZO) thin-film transistor (TFT); interface engineering; passivation layer (PVL); technology computer-aided design (TCAD); A-IGZO TFTS
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/245802
• Institution: National University of Singapore

10.1109/TED.2020.2989105