Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure

10.1016/j.jallcom.2019.07.050

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Bibliographic Details
Main Authors:	Samanta, Subhranu, Gong, Xiao, Zhang, Panpan, Han, Kaizhen, Fong, Xuanyao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	ELSEVIER SCIENCE SA 2023
Subjects:	Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science RRAM Cross-point SiOx Low current Neuromorphic RANDOM-ACCESS MEMORY OXIDE RELIABILITY DEVICE LAYER
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/245804
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-245804
record_format	dspace
spelling	sg-nus-scholar.10635-2458042024-04-16T12:17:04Z Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure Samanta, Subhranu Gong, Xiao Zhang, Panpan Han, Kaizhen Fong, Xuanyao ELECTRICAL AND COMPUTER ENGINEERING Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science RRAM Cross-point SiOx Low current Neuromorphic RANDOM-ACCESS MEMORY OXIDE RELIABILITY DEVICE LAYER 10.1016/j.jallcom.2019.07.050 JOURNAL OF ALLOYS AND COMPOUNDS 805 915-923 2023-11-08T03:43:35Z 2023-11-08T03:43:35Z 2019-10-15 2023-11-05T09:27:48Z Article Samanta, Subhranu, Gong, Xiao, Zhang, Panpan, Han, Kaizhen, Fong, Xuanyao (2019-10-15). Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure. JOURNAL OF ALLOYS AND COMPOUNDS 805 : 915-923. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2019.07.050 0925-8388 1873-4669 https://scholarbank.nus.edu.sg/handle/10635/245804 en ELSEVIER SCIENCE SA Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science RRAM Cross-point SiOx Low current Neuromorphic RANDOM-ACCESS MEMORY OXIDE RELIABILITY DEVICE LAYER
spellingShingle	Science & Technology Physical Sciences Technology Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science RRAM Cross-point SiOx Low current Neuromorphic RANDOM-ACCESS MEMORY OXIDE RELIABILITY DEVICE LAYER Samanta, Subhranu Gong, Xiao Zhang, Panpan Han, Kaizhen Fong, Xuanyao Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure
description	10.1016/j.jallcom.2019.07.050
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Samanta, Subhranu Gong, Xiao Zhang, Panpan Han, Kaizhen Fong, Xuanyao
format	Article
author	Samanta, Subhranu Gong, Xiao Zhang, Panpan Han, Kaizhen Fong, Xuanyao
author_sort	Samanta, Subhranu
title	Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure
title_short	Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure
title_full	Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure
title_fullStr	Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure
title_full_unstemmed	Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure
title_sort	bipolar resistive switching and synaptic characteristics modulation at sub-μa current level using novel ni/sio<sub>x</sub>/w cross-point structure
publisher	ELSEVIER SCIENCE SA
publishDate	2023
url	https://scholarbank.nus.edu.sg/handle/10635/245804
_version_	1800915973269618688

Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO<sub>x</sub>/W cross-point structure

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