Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM

10.1109/FLEPS.2019.8792259

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Bibliographic Details
Main Authors:	Samanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	IEEE 2023
Subjects:	Science & Technology Technology Engineering, Manufacturing Engineering, Electrical & Electronic Instruments & Instrumentation Materials Science, Multidisciplinary Engineering Materials Science Flexible RRAM SiOx Low CC
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/245806
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-245806
record_format	dspace
spelling	sg-nus-scholar.10635-2458062024-04-16T11:53:01Z Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM Samanta, Subhranu Zhang, Panpan Han, Kaizhen Gong, Xiao Chakraborty, Sandipan Li, Yida Fong, Xuanyao ELECTRICAL AND COMPUTER ENGINEERING Science & Technology Technology Engineering, Manufacturing Engineering, Electrical & Electronic Instruments & Instrumentation Materials Science, Multidisciplinary Engineering Materials Science Flexible RRAM SiOx Low CC 10.1109/FLEPS.2019.8792259 1st IEEE International Conference on Flexible and Printable Sensors and Systems (IEEE FLEPS) 2023-11-08T04:00:45Z 2023-11-08T04:00:45Z 2019 2023-11-05T09:28:41Z Conference Paper Samanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao (2019). Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM. 1st IEEE International Conference on Flexible and Printable Sensors and Systems (IEEE FLEPS). ScholarBank@NUS Repository. https://doi.org/10.1109/FLEPS.2019.8792259 9781538693049 https://scholarbank.nus.edu.sg/handle/10635/245806 IEEE Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Science & Technology Technology Engineering, Manufacturing Engineering, Electrical & Electronic Instruments & Instrumentation Materials Science, Multidisciplinary Engineering Materials Science Flexible RRAM SiOx Low CC
spellingShingle	Science & Technology Technology Engineering, Manufacturing Engineering, Electrical & Electronic Instruments & Instrumentation Materials Science, Multidisciplinary Engineering Materials Science Flexible RRAM SiOx Low CC Samanta, Subhranu Zhang, Panpan Han, Kaizhen Gong, Xiao Chakraborty, Sandipan Li, Yida Fong, Xuanyao Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM
description	10.1109/FLEPS.2019.8792259
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Samanta, Subhranu Zhang, Panpan Han, Kaizhen Gong, Xiao Chakraborty, Sandipan Li, Yida Fong, Xuanyao
format	Conference or Workshop Item
author	Samanta, Subhranu Zhang, Panpan Han, Kaizhen Gong, Xiao Chakraborty, Sandipan Li, Yida Fong, Xuanyao
author_sort	Samanta, Subhranu
title	Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM
title_short	Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM
title_full	Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM
title_fullStr	Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM
title_full_unstemmed	Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM
title_sort	impact of ti interfacial layer on resistive switching characteristics at sub-μa current level in sio<sub>x</sub>-based flexible cross-point rram
publisher	IEEE
publishDate	2023
url	https://scholarbank.nus.edu.sg/handle/10635/245806
_version_	1800915973663883264

Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM

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