Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM

Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM

10.1109/FLEPS.2019.8792259

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Bibliographic Details
Main Authors:	Samanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	IEEE 2023
Subjects:	Science & Technology Technology Engineering, Manufacturing Engineering, Electrical & Electronic Instruments & Instrumentation Materials Science, Multidisciplinary Engineering Materials Science Flexible RRAM SiOx Low CC
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/245806
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Institution:	National University of Singapore

Description
Summary:	10.1109/FLEPS.2019.8792259