GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting

• Main Authors: Zhou, Jie, Wang, Haibo, Huang, Po Rei, Xu, Shengqiang, Liu, Yang, Gong, Jiarui, Shen, Jianping, Vicent, Daniel, Haessly, Samuel, Abrand, Alireza, Mohseni, Parsian K., Kim, Munho, Yu, Shui-Qing, Chang, Guo-En, Gong, Xiao, Ma, Zhenqiang
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; Epitaxially grown; Germanium tins
• Online Access: https://hdl.handle.net/10356/181644
• Institution: Nanyang Technological University

Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy...