GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting

• المؤلفون الرئيسيون: Zhou, Jie, Wang, Haibo, Huang, Po Rei, Xu, Shengqiang, Liu, Yang, Gong, Jiarui, Shen, Jianping, Vicent, Daniel, Haessly, Samuel, Abrand, Alireza, Mohseni, Parsian K., Kim, Munho, Yu, Shui-Qing, Chang, Guo-En, Gong, Xiao, Ma, Zhenqiang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Epitaxially grown; Germanium tins
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/181644

Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy barriers between GaAs and GeSn-MQW enable the diodes fabricated from the heterojunction to exhibit extraordinary rectification ratios (larger than 105) and record-low reverse-bias current density (∼10−6 A/cm2). The grafting-based LED performs as well as the epitaxially grown counterpart. The work may pave the way for future improvements of GeSn-based electronic devices.