GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting
Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy...
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Main Authors: | , , , , , , , , , , , , , , , |
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格式: | Article |
語言: | English |
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2024
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在線閱讀: | https://hdl.handle.net/10356/181644 |
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機構: | Nanyang Technological University |
語言: | English |
總結: | Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy barriers between GaAs and GeSn-MQW enable the diodes fabricated from the heterojunction to exhibit extraordinary rectification ratios (larger than 105) and record-low reverse-bias current density (∼10−6 A/cm2). The grafting-based LED performs as well as the epitaxially grown counterpart. The work may pave the way for future improvements of GeSn-based electronic devices. |
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