GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting

GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting

Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy...

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Bibliographic Details
Main Authors: Zhou, Jie, Wang, Haibo, Huang, Po Rei, Xu, Shengqiang, Liu, Yang, Gong, Jiarui, Shen, Jianping, Vicent, Daniel, Haessly, Samuel, Abrand, Alireza, Mohseni, Parsian K., Kim, Munho, Yu, Shui-Qing, Chang, Guo-En, Gong, Xiao, Ma, Zhenqiang
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2024
Subjects:
Engineering
Epitaxially grown
Germanium tins
Online Access:https://hdl.handle.net/10356/181644
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Institution: Nanyang Technological University
Language: English
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Summary:Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic devices operating at the near-infrared to mid-infrared spectral range. In this work, we report the synthesis and characterization of a GaAs/GeSn-MQW/Ge n-i-p heterojunction created via grafting. The improved energy barriers between GaAs and GeSn-MQW enable the diodes fabricated from the heterojunction to exhibit extraordinary rectification ratios (larger than 105) and record-low reverse-bias current density (∼10−6 A/cm2). The grafting-based LED performs as well as the epitaxially grown counterpart. The work may pave the way for future improvements of GeSn-based electronic devices.

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