Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

10.1109/LED.2007.893221

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Bibliographic Details
Main Authors: Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Electron mobility
nMOSFET
Silicon nitride liner
Silicon-carbon (Si1-y Cy)
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82289
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82289

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