Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

10.1109/LED.2007.893221

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Bibliographic Details
Main Authors:	Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Electron mobility nMOSFET Silicon nitride liner Silicon-carbon (Si1-y Cy) Strain Stress
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82289
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82289
record_format	dspace
spelling	sg-nus-scholar.10635-822892023-10-31T20:24:56Z Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner Ang, K.-W. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Electron mobility nMOSFET Silicon nitride liner Silicon-carbon (Si1-y Cy) Strain Stress 10.1109/LED.2007.893221 IEEE Electron Device Letters 28 4 301-304 EDLED 2014-10-07T04:27:37Z 2014-10-07T04:27:37Z 2007-04 Article Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-04). Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner. IEEE Electron Device Letters 28 (4) : 301-304. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.893221 07413106 http://scholarbank.nus.edu.sg/handle/10635/82289 000245225300015 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Electron mobility nMOSFET Silicon nitride liner Silicon-carbon (Si1-y Cy) Strain Stress
spellingShingle	Electron mobility nMOSFET Silicon nitride liner Silicon-carbon (Si1-y Cy) Strain Stress Ang, K.-W. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C. Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
description	10.1109/LED.2007.893221
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ang, K.-W. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Ang, K.-W. Chui, K.-J. Tung, C.-H. Balasubramanian, N. Li, M.-F. Samudra, G.S. Yeo, Y.-C.
author_sort	Ang, K.-W.
title	Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
title_short	Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
title_full	Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
title_fullStr	Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
title_full_unstemmed	Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner
title_sort	enhanced strain effects in 25-nm gate-length thin-body nmosfets with silicon-carbon source/drain and tensile-stress liner
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82289
_version_	1781784101157601280

Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

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