Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

10.1109/LED.2007.893221

Saved in:
Bibliographic Details
Main Authors: Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Electron mobility
nMOSFET
Silicon nitride liner
Silicon-carbon (Si1-y Cy)
Strain
Stress
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82289
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Similar Items

Similar Items