N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy

N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy

10.1109/LED.2008.2005648

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Bibliographic Details
Main Authors: Koh, S.-M., Sekar, K., Lee, D., Krull, W., Wang, X., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Laser anneal
Molecular carbon
Silicon carbon
Solid phase epitaxy (SPE)
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82749
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82749

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