N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy

N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy

10.1109/LED.2008.2005648

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Bibliographic Details
Main Authors: Koh, S.-M., Sekar, K., Lee, D., Krull, W., Wang, X., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Laser anneal
Molecular carbon
Silicon carbon
Solid phase epitaxy (SPE)
Strain
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82749
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-827492023-10-27T08:39:14Z N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy Koh, S.-M. Sekar, K. Lee, D. Krull, W. Wang, X. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Laser anneal Molecular carbon Silicon carbon Solid phase epitaxy (SPE) Strain 10.1109/LED.2008.2005648 IEEE Electron Device Letters 29 12 1315-1318 EDLED 2014-10-07T04:33:02Z 2014-10-07T04:33:02Z 2008 Article Koh, S.-M., Sekar, K., Lee, D., Krull, W., Wang, X., Samudra, G.S., Yeo, Y.-C. (2008). N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy. IEEE Electron Device Letters 29 (12) : 1315-1318. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2005648 07413106 http://scholarbank.nus.edu.sg/handle/10635/82749 000262062000009 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Laser anneal
Molecular carbon
Silicon carbon
Solid phase epitaxy (SPE)
Strain
spellingShingle Laser anneal
Molecular carbon
Silicon carbon
Solid phase epitaxy (SPE)
Strain
Koh, S.-M.
Sekar, K.
Lee, D.
Krull, W.
Wang, X.
Samudra, G.S.
Yeo, Y.-C.
N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
description 10.1109/LED.2008.2005648
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Koh, S.-M.
Sekar, K.
Lee, D.
Krull, W.
Wang, X.
Samudra, G.S.
Yeo, Y.-C.
format Article
author Koh, S.-M.
Sekar, K.
Lee, D.
Krull, W.
Wang, X.
Samudra, G.S.
Yeo, Y.-C.
author_sort Koh, S.-M.
title N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
title_short N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
title_full N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
title_fullStr N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
title_full_unstemmed N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
title_sort n-channel mosfets with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82749
_version_ 1781784213627863040

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