N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy

• Main Authors: Koh, S.-M., Sekar, K., Lee, D., Krull, W., Wang, X., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Laser anneal; Molecular carbon; Silicon carbon; Solid phase epitaxy (SPE); Strain
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82749
• Institution: National University of Singapore

10.1109/LED.2008.2005648