N-channel MOSFETs with embedded silicon-carbon source/drain stressors formed using cluster-carbon implant and excimer-laser-induced solid phase epitaxy

• Main Authors: Koh, S.-M., Sekar, K., Lee, D., Krull, W., Wang, X., Samudra, G.S., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Laser anneal; Molecular carbon; Silicon carbon; Solid phase epitaxy (SPE); Strain
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82749

10.1109/LED.2008.2005648