Progressive development of superjunction power MOSFET devices

Progressive development of superjunction power MOSFET devices

10.1109/TED.2007.911344

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Bibliographic Details
Main Authors: Chen, Y., Liang, Y.C., Samudra, G.S., Yang, X., Buddharaju, K.D., Feng, H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Power integrated circuits
Power MOSFET
Silicon unipolar limit
Superjuction (SJ)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57131
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/57131

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