n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport

• Main Authors: Chui, K.-J., Ang, K.-W., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Drive current; Iinjection velocity; n-MOSFETs; Uniaxial tension
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82767
• Institution: National University of Singapore

10.1109/TED.2006.888629