n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport

n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport

10.1109/TED.2006.888629

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Bibliographic Details
Main Authors: Chui, K.-J., Ang, K.-W., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Drive current
Iinjection velocity
n-MOSFETs
Uniaxial tension
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82767
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2006.888629

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