n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport

• Main Authors: Chui, K.-J., Ang, K.-W., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 主題: Drive current; Iinjection velocity; n-MOSFETs; Uniaxial tension
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82767
• 機構: National University of Singapore

10.1109/TED.2006.888629