Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

• Main Authors: Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Carbon; Field effect transistors; Heterostructure; Mobility; MOSFET; MOSFETs; SiGe; Silicon; Silicon compounds
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83082
• Institution: National University of Singapore

10.1109/TED.2007.908599