Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

10.1109/TED.2007.908599

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Bibliographic Details
Main Authors:	Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Carbon Field effect transistors Heterostructure Mobility MOSFET MOSFETs SiGe Silicon Silicon compounds
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83082
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83082
record_format	dspace
spelling	sg-nus-scholar.10635-830822024-11-14T01:24:54Z Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, W.-Y. Zang, H. Oh, H.-J. Choi, K.-J. Nguyen, H.S. Lo, G.-Q. Cho, B.J. ELECTRICAL & COMPUTER ENGINEERING Carbon Field effect transistors Heterostructure Mobility MOSFET MOSFETs SiGe Silicon Silicon compounds 10.1109/TED.2007.908599 IEEE Transactions on Electron Devices 54 12 3292-3298 IETDA 2014-10-07T04:37:02Z 2014-10-07T04:37:02Z 2007-12 Article Loh, W.-Y., Zang, H., Oh, H.-J., Choi, K.-J., Nguyen, H.S., Lo, G.-Q., Cho, B.J. (2007-12). Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance. IEEE Transactions on Electron Devices 54 (12) : 3292-3298. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2007.908599 00189383 http://scholarbank.nus.edu.sg/handle/10635/83082 000251268300020 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Carbon Field effect transistors Heterostructure Mobility MOSFET MOSFETs SiGe Silicon Silicon compounds
spellingShingle	Carbon Field effect transistors Heterostructure Mobility MOSFET MOSFETs SiGe Silicon Silicon compounds Loh, W.-Y. Zang, H. Oh, H.-J. Choi, K.-J. Nguyen, H.S. Lo, G.-Q. Cho, B.J. Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
description	10.1109/TED.2007.908599
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Loh, W.-Y. Zang, H. Oh, H.-J. Choi, K.-J. Nguyen, H.S. Lo, G.-Q. Cho, B.J.
format	Article
author	Loh, W.-Y. Zang, H. Oh, H.-J. Choi, K.-J. Nguyen, H.S. Lo, G.-Q. Cho, B.J.
author_sort	Loh, W.-Y.
title	Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
title_short	Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
title_full	Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
title_fullStr	Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
title_full_unstemmed	Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
title_sort	strained si/sige channel with buried si0.99c0.01 for improved drivability, gate stack integrity and noise performance
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83082
_version_	1821201580918046720

Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

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