Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner

• Main Authors: Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Electron mobility; nMOSFET; Silicon nitride liner; Silicon-carbon (Si1-y Cy); Strain; Stress
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82289
• Institution: National University of Singapore

10.1109/LED.2007.893221