Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length

Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length

10.1109/IEDM.2006.346915

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Bibliographic Details
Main Authors:	Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Wong, H.-S., Lim, P.-C., Lai, D.M.Y., Lo, G.-Q., Tung, C.-H., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84020
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Institution:	National University of Singapore

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