Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length

10.1109/IEDM.2006.346915

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Main Authors:	Lee, R.T.P., Liow, T.-Y., Tan, K.-M., Lim, A.E.-J., Wong, H.-S., Lim, P.-C., Lai, D.M.Y., Lo, G.-Q., Tung, C.-H., Samudra, G., Chi, D.-Z., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84020
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84020
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spelling	sg-nus-scholar.10635-840202015-01-08T02:28:32Z Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length Lee, R.T.P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Wong, H.-S. Lim, P.-C. Lai, D.M.Y. Lo, G.-Q. Tung, C.-H. Samudra, G. Chi, D.-Z. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2006.346915 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-10-07T04:47:52Z 2014-10-07T04:47:52Z 2006 Conference Paper Lee, R.T.P.,Liow, T.-Y.,Tan, K.-M.,Lim, A.E.-J.,Wong, H.-S.,Lim, P.-C.,Lai, D.M.Y.,Lo, G.-Q.,Tung, C.-H.,Samudra, G.,Chi, D.-Z.,Yeo, Y.-C. (2006). Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2006.346915" target="_blank">https://doi.org/10.1109/IEDM.2006.346915</a> 1424404398 01631918 http://scholarbank.nus.edu.sg/handle/10635/84020 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2006.346915
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lee, R.T.P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Wong, H.-S. Lim, P.-C. Lai, D.M.Y. Lo, G.-Q. Tung, C.-H. Samudra, G. Chi, D.-Z. Yeo, Y.-C.
format	Conference or Workshop Item
author	Lee, R.T.P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Wong, H.-S. Lim, P.-C. Lai, D.M.Y. Lo, G.-Q. Tung, C.-H. Samudra, G. Chi, D.-Z. Yeo, Y.-C.
spellingShingle	Lee, R.T.P. Liow, T.-Y. Tan, K.-M. Lim, A.E.-J. Wong, H.-S. Lim, P.-C. Lai, D.M.Y. Lo, G.-Q. Tung, C.-H. Samudra, G. Chi, D.-Z. Yeo, Y.-C. Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
author_sort	Lee, R.T.P.
title	Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
title_short	Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
title_full	Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
title_fullStr	Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
title_full_unstemmed	Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length
title_sort	novel nickel-alloy suicides for source/drain contact resistance reduction in n-channel multiple-gate transistors with sub-35nm gate length
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84020
_version_	1681089542468141056

Novel nickel-alloy suicides for source/drain contact resistance reduction in N-channel multiple-gate transistors with sub-35nm gate length

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