Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Samudra, G., Rajendran, K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Analytical model
Deep sub-micron
Double-gate
Poisson equation
SOI MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81129
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81129

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