On the impact ionization in double-gate MOSFET using full band monte carlo method

On the impact ionization in double-gate MOSFET using full band monte carlo method

10.1109/NANO.2008.105

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Bibliographic Details
Main Authors: Bai, P., Chang, K., Kajen, R.S., Li, E., Samudra, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Breakdown onset voltages
Double-gate MOSFET
Gate oxide reliability
Impact ionization
Monte carlo method
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71229
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/71229

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