On the impact ionization in double-gate MOSFET using full band monte carlo method
10.1109/NANO.2008.105
Saved in:
Main Authors: | Bai, P., Chang, K., Kajen, R.S., Li, E., Samudra, G. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/71229 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Gate Dielectric-Breakdown-Induced Microstructural Damage in MOSFETs
by: Tang, L.J., et al.
Published: (2014) -
Characterization of hot carrier reliability in deep submicronmeter MOSFETs
by: LIAO HONG
Published: (2010) -
Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor
by: Toh, E.-H., et al.
Published: (2014) -
Size effect of embedded nanocrystals in floating gate MOSFET devices
by: Cheng, X.Z., et al.
Published: (2014) -
Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
by: Liu, X.Y., et al.
Published: (2014)