On the impact ionization in double-gate MOSFET using full band monte carlo method

10.1109/NANO.2008.105

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Main Authors: Bai, P., Chang, K., Kajen, R.S., Li, E., Samudra, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71229
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-712292015-02-25T03:09:44Z On the impact ionization in double-gate MOSFET using full band monte carlo method Bai, P. Chang, K. Kajen, R.S. Li, E. Samudra, G. ELECTRICAL & COMPUTER ENGINEERING Breakdown onset voltages Double-gate MOSFET Gate oxide reliability Impact ionization Monte carlo method 10.1109/NANO.2008.105 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO 335-338 2014-06-19T03:21:21Z 2014-06-19T03:21:21Z 2008 Conference Paper Bai, P.,Chang, K.,Kajen, R.S.,Li, E.,Samudra, G. (2008). On the impact ionization in double-gate MOSFET using full band monte carlo method. 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO : 335-338. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/NANO.2008.105" target="_blank">https://doi.org/10.1109/NANO.2008.105</a> 9781424421046 http://scholarbank.nus.edu.sg/handle/10635/71229 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic Breakdown onset voltages
Double-gate MOSFET
Gate oxide reliability
Impact ionization
Monte carlo method
spellingShingle Breakdown onset voltages
Double-gate MOSFET
Gate oxide reliability
Impact ionization
Monte carlo method
Bai, P.
Chang, K.
Kajen, R.S.
Li, E.
Samudra, G.
On the impact ionization in double-gate MOSFET using full band monte carlo method
description 10.1109/NANO.2008.105
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Bai, P.
Chang, K.
Kajen, R.S.
Li, E.
Samudra, G.
format Conference or Workshop Item
author Bai, P.
Chang, K.
Kajen, R.S.
Li, E.
Samudra, G.
author_sort Bai, P.
title On the impact ionization in double-gate MOSFET using full band monte carlo method
title_short On the impact ionization in double-gate MOSFET using full band monte carlo method
title_full On the impact ionization in double-gate MOSFET using full band monte carlo method
title_fullStr On the impact ionization in double-gate MOSFET using full band monte carlo method
title_full_unstemmed On the impact ionization in double-gate MOSFET using full band monte carlo method
title_sort on the impact ionization in double-gate mosfet using full band monte carlo method
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/71229
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