Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation

Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Saved in:
Bibliographic Details
Main Authors: Liu, X.Y., Du, G., Xia, Z.L., Kang, J.F., Wang, Y., Han, R.Q., Yu, H.Y., Li, M.-F., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
GOI
Monte Carlo
Quantum effect
Scaling
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71705
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/71705

Similar Items