Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation

Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

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Bibliographic Details
Main Authors: Liu, X.Y., Du, G., Xia, Z.L., Kang, J.F., Wang, Y., Han, R.Q., Yu, H.Y., Li, M.-F., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
GOI
Monte Carlo
Quantum effect
Scaling
Online Access:http://scholarbank.nus.edu.sg/handle/10635/71705
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Institution: National University of Singapore
id sg-nus-scholar.10635-71705
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spelling sg-nus-scholar.10635-717052015-02-19T20:45:25Z Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation Liu, X.Y. Du, G. Xia, Z.L. Kang, J.F. Wang, Y. Han, R.Q. Yu, H.Y. Li, M.-F. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING GOI Monte Carlo Quantum effect Scaling International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2 1186-1191 2014-06-19T03:26:49Z 2014-06-19T03:26:49Z 2004 Conference Paper Liu, X.Y.,Du, G.,Xia, Z.L.,Kang, J.F.,Wang, Y.,Han, R.Q.,Yu, H.Y.,Li, M.-F.,Kwong, D.L. (2004). Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2 : 1186-1191. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/71705 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
topic GOI
Monte Carlo
Quantum effect
Scaling
spellingShingle GOI
Monte Carlo
Quantum effect
Scaling
Liu, X.Y.
Du, G.
Xia, Z.L.
Kang, J.F.
Wang, Y.
Han, R.Q.
Yu, H.Y.
Li, M.-F.
Kwong, D.L.
Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
description International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Liu, X.Y.
Du, G.
Xia, Z.L.
Kang, J.F.
Wang, Y.
Han, R.Q.
Yu, H.Y.
Li, M.-F.
Kwong, D.L.
format Conference or Workshop Item
author Liu, X.Y.
Du, G.
Xia, Z.L.
Kang, J.F.
Wang, Y.
Han, R.Q.
Yu, H.Y.
Li, M.-F.
Kwong, D.L.
author_sort Liu, X.Y.
title Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
title_short Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
title_full Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
title_fullStr Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
title_full_unstemmed Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
title_sort scaling properties of goi mosfets in naon scale by full band monte carlo simulation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/71705
_version_ 1681087432511979520

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