Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation
International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
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Main Authors: | Liu, X.Y., Du, G., Xia, Z.L., Kang, J.F., Wang, Y., Han, R.Q., Yu, H.Y., Li, M.-F., Kwong, D.L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/71705 |
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Institution: | National University of Singapore |
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