Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation

• Main Authors: Liu, X.Y., Du, G., Xia, Z.L., Kang, J.F., Wang, Y., Han, R.Q., Yu, H.Y., Li, M.-F., Kwong, D.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: GOI; Monte Carlo; Quantum effect; Scaling
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/71705
• Institution: National University of Singapore

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT