A generic gate driver for SiC MOSFETs with adjustable positive and negative rail voltage

• المؤلفون الرئيسيون: Li, Yeo Howe, Kanamarlapudi, Venkata Ravi Kishore
• مؤلفون آخرون: 2018 Asian Conference on Energy, Power and Transportion Electrification (ACEPT 2018)
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; SiC MOSFET; Gate Driver
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143392

SiC MOSFETs are well known for possessing lower losses compared with silicon MOSFETS or IGBTs. In order to drive them efficiently, suitable drivers must be designed. However, most commercially available drivers and drivers in literature are suitable for only a limited range of SiC MOSFETs due to lim...