A generic gate driver for SiC MOSFETs with adjustable positive and negative rail voltage
SiC MOSFETs are well known for possessing lower losses compared with silicon MOSFETS or IGBTs. In order to drive them efficiently, suitable drivers must be designed. However, most commercially available drivers and drivers in literature are suitable for only a limited range of SiC MOSFETs due to lim...
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| Main Authors: | , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/143392 |
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| Institution: | Nanyang Technological University |
| Language: | English |