In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC

In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC

10.1016/j.tsf.2010.03.116

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Bibliographic Details
Main Authors: Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Annealing
High-k
Nitrogen incorporation
SiC
Wide band-gap semiconductor
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96898
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/96898

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