In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC

10.1016/j.tsf.2010.03.116

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Main Authors: Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
SiC
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96898
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-968982023-10-26T08:11:33Z In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC Chen, Q. Feng, Y.P. Chai, J.W. Zhang, Z. Pan, J.S. Wang, S.J. PHYSICS Annealing High-k Nitrogen incorporation SiC Wide band-gap semiconductor 10.1016/j.tsf.2010.03.116 Thin Solid Films 518 24 SUPPL. e31-e33 THSFA 2014-10-16T09:28:51Z 2014-10-16T09:28:51Z 2010-10-01 Article Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2010-10-01). In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC. Thin Solid Films 518 (24 SUPPL.) : e31-e33. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.116 00406090 http://scholarbank.nus.edu.sg/handle/10635/96898 000295942000007 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Annealing
High-k
Nitrogen incorporation
SiC
Wide band-gap semiconductor
spellingShingle Annealing
High-k
Nitrogen incorporation
SiC
Wide band-gap semiconductor
Chen, Q.
Feng, Y.P.
Chai, J.W.
Zhang, Z.
Pan, J.S.
Wang, S.J.
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
description 10.1016/j.tsf.2010.03.116
author2 PHYSICS
author_facet PHYSICS
Chen, Q.
Feng, Y.P.
Chai, J.W.
Zhang, Z.
Pan, J.S.
Wang, S.J.
format Article
author Chen, Q.
Feng, Y.P.
Chai, J.W.
Zhang, Z.
Pan, J.S.
Wang, S.J.
author_sort Chen, Q.
title In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
title_short In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
title_full In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
title_fullStr In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
title_full_unstemmed In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
title_sort in situ x-ray photoelectron spectroscopy studies of hfo2 gate dielectric on sic
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/96898
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