In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC
10.1016/j.tsf.2010.03.116
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sg-nus-scholar.10635-968982023-10-26T08:11:33Z In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC Chen, Q. Feng, Y.P. Chai, J.W. Zhang, Z. Pan, J.S. Wang, S.J. PHYSICS Annealing High-k Nitrogen incorporation SiC Wide band-gap semiconductor 10.1016/j.tsf.2010.03.116 Thin Solid Films 518 24 SUPPL. e31-e33 THSFA 2014-10-16T09:28:51Z 2014-10-16T09:28:51Z 2010-10-01 Article Chen, Q., Feng, Y.P., Chai, J.W., Zhang, Z., Pan, J.S., Wang, S.J. (2010-10-01). In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC. Thin Solid Films 518 (24 SUPPL.) : e31-e33. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2010.03.116 00406090 http://scholarbank.nus.edu.sg/handle/10635/96898 000295942000007 Scopus |
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Annealing High-k Nitrogen incorporation SiC Wide band-gap semiconductor |
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Annealing High-k Nitrogen incorporation SiC Wide band-gap semiconductor Chen, Q. Feng, Y.P. Chai, J.W. Zhang, Z. Pan, J.S. Wang, S.J. In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC |
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10.1016/j.tsf.2010.03.116 |
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PHYSICS |
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PHYSICS Chen, Q. Feng, Y.P. Chai, J.W. Zhang, Z. Pan, J.S. Wang, S.J. |
format |
Article |
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Chen, Q. Feng, Y.P. Chai, J.W. Zhang, Z. Pan, J.S. Wang, S.J. |
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Chen, Q. |
title |
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC |
title_short |
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC |
title_full |
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC |
title_fullStr |
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC |
title_full_unstemmed |
In situ X-ray photoelectron spectroscopy studies of HfO2 gate dielectric on SiC |
title_sort |
in situ x-ray photoelectron spectroscopy studies of hfo2 gate dielectric on sic |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/96898 |
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