Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory

Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory

10.1109/LED.2008.2000600

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Bibliographic Details
Main Authors: Pu, J., Kim, S.-J., Lee, S.-H., Kim, Y.-S., Kim, S.-T., Choi, K.-J., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Flash memory
Floating gate (FG)
Retention
Silicon carbide (SiC-3C)
Silicon carbide (Sic-3C)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82027
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82027

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